Jeon, Dae-Young Park, So Jeong Mouis, Mireille Barraud, Sylvain Kim, Gyu-Tae Ghibaudo, Gerard 2024-01-20T02:02:30Z 2024-01-20T02:02:30Z 2021-09-01 2017-03 0038-1101 https://pubs.kist.re.kr/handle/201004/123002 Transconductance (g(m)) and its derivative (dg(m)/dV(g)) of junctionless transistors (JLTs), considered as a possible candidate for future CMOS technology, show their unique operation properties such as bulk neutral and surface accumulation conduction. However, source/drain series resistance (R-sd) causes significant degradation of intrinsic g(m) and dg(m)/dV(g) behavior in JLTs. In this letter, the Rsd effects on the operation of JLTs were investigated in detail and also verified with analytical modeling equations. This work provides helpful information for a better understanding of the operation mechanism of JLTs with de-embedded R-sd effects. (C) 2016 Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD NANOWIRE TRANSISTORS NM Impact of series resistance on the operation of junctionless transistors Article 10.1016/j.sse.2016.12.004 1 SOLID-STATE ELECTRONICS, v.129, pp.103 - 107 SOLID-STATE ELECTRONICS 129 103 107 scie scopus 000394402800017 Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter Engineering Physics Article NANOWIRE TRANSISTORS NM Junctionless transistors (JLTs) Bulk neutral conduction Series resistance (R-sd) Analytical modeling De-embedded Rsd effects