Radulaski, Marina Widmann, Matthias Niethammer, Matthias Zhang, Jingyuan Linda Lee, Sang-Yun Rendler, Torsten Lagoudakis, Konstantinos G. Son, Nguyen Tien Janzen, Erik Ohshima, Takeshi Wrachtrup, Joerg Vuckovic, Jelena 2024-01-20T02:02:53Z 2024-01-20T02:02:53Z 2021-09-01 2017-03 1530-6984 https://pubs.kist.re.kr/handle/201004/123024 Silicon carbide is a promising platform for single photon sources, quantum bits (qubits), and nanoscale sensors based on individual color centers. Toward this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1400 nm diameters. We obtain high collection efficiency of up to 22 kcounts/s optical saturation rates from a single silicon vacancy center while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum phtonics architecture relying on single photon sources and qubits. English AMER CHEMICAL SOC SPINS Scalable Quantum Photonics with Single Color Centers in Silicon Carbide Article 10.1021/acs.nanolett.6b05102 1 NANO LETTERS, v.17, no.3, pp.1782 - 1786 NANO LETTERS 17 3 1782 1786 scie scopus 000396185800067 2-s2.0-85014906173 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article SPINS Color centers silicon carbide photonics spintronics nanopillars spin-qubits