Roh, Ii Pyo Kim, Sang Hyeon Song, Yun Heub Song, Jin Dong 2024-01-20T02:03:05Z 2024-01-20T02:03:05Z 2021-09-01 2017-03 1567-1739 https://pubs.kist.re.kr/handle/201004/123036 We designed and fabricated an Al0.9Ga0.1Sb/In0.4Ga0.6Sb/Al0.9Ga0.1Sb quantum well (QW) with a balanced band offset for channel materials in future complementary metal-oxide-semiconductor (CMOS) circuits. The QW design was carried out by one-dimensional Schrodinger Poisson equation system. The QW was grown by molecular beam epitaxy and the crystallinity and the surface morphology were characterized using a transmission electron microscope (TEM) and atomic force microscope (AFM), respectively. The results showed good crystalline behaviors and morphologies without any identifiable morphological defects. Furthermore, we investigated the strain characteristics in In0.4Ga0.6Sb by measuring the Raman shift. We found that In0.4Ga0.6Sb has high compressive strain of 1.74% and the strain distribution was uniform. (C) 2017 Elsevier B.V. All rights reserved. English ELSEVIER SILICON MOSFETS CHANNEL FUTURE Uniformly strained AlGaSb/InGaSb/AlGaSb quantum well on GaAs substrates for balanced complementary metal-oxide-semiconductors Article 10.1016/j.cap.2017.01.003 1 CURRENT APPLIED PHYSICS, v.17, no.3, pp.417 - 421 CURRENT APPLIED PHYSICS 17 3 417 421 scie scopus kci ART002205549 000394192600013 2-s2.0-85009165895 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article SILICON MOSFETS CHANNEL FUTURE InGaSb Balanced CMOS High mobility Strain