Yu, Young-Jun Lee, Gwan-Hyoung Choi, Ji Il Shim, Yoon Su Lee, Chul-Ho Kang, Seok Ju Lee, Sunwoo Rim, Kwang Taeg Flynn, George W. Hone, James Kim, Yong-Hoon Kim, Philip Nuckolls, Colin Ahn, Seokhoon 2024-01-20T02:03:55Z 2024-01-20T02:03:55Z 2021-09-01 2017-02-02 0935-9648 https://pubs.kist.re.kr/handle/201004/123078 The epitaxially grown alkane layers on graphene are prepared by a simple drop-casting method and greatly reduce the environmentally driven doping and charge impurities in graphene. Multiscale simulation studies show that this enhancement of charge homogeneity in graphene originates from the lifting of graphene from the SiO2 surface toward the well-ordered and rigid alkane selfassembled layers. English WILEY-V C H VERLAG GMBH FIELD-EFFECT TRANSISTORS BALLISTIC TRANSPORT RAMAN-SPECTROSCOPY MOBILITY PERFORMANCE GRAPHITE STRAIN FILMS Epitaxially Self-Assembled Alkane Layers for Graphene Electronics Article 10.1002/adma.201603925 1 ADVANCED MATERIALS, v.29, no.5 ADVANCED MATERIALS 29 5 scie scopus 000396142100013 2-s2.0-85006127991 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article FIELD-EFFECT TRANSISTORS BALLISTIC TRANSPORT RAMAN-SPECTROSCOPY MOBILITY PERFORMANCE GRAPHITE STRAIN FILMS graphene mobility passivation self-assembly van der Waals interaction