Ma, Xing-Hua Kweon, Sang-Hyo Nahm, Sahn Kang, Chong-Yun Yoon, Seok-Jin Kim, Young-Sik 2024-01-20T02:04:04Z 2024-01-20T02:04:04Z 2021-09-01 2017-02-01 0272-8842 https://pubs.kist.re.kr/handle/201004/123087 Dense Bi4Ge3O12 ceramics sintered at 850 degrees C had a relative permittivity (epsilon(r)) of 15.7, temperature coefficient of resonant frequency (tau(f)) of 24.2 ppm/degrees C, and quality factor (Qxf) of 28,361 GHz. However, because of the existence of Bi12GeO20 as a secondary phase, the microwave dielectric properties of Bi4Ge3O12 would be degraded. Therefore, to avoid the formation of the Bi12GeO20 secondary phase, Bi2O3-deficient ceramics with 0.1<_x<_0.6 were sintered at 850 degrees C. A single phase of Bi3.6Ge3O11.4 (x=0.4) ceramic sintered at 850 degrees C for 5 h without any secondary phase exhibited suitable microwave dielectric properties for a ceramic substrate: epsilon(r)=14.9, tau(f) =-9.5 ppm/degrees C, and Qxf=53,277 GHz. English ELSEVIER SCI LTD BISMUTH-GERMANATE GLASS DETECTORS POROSITY MN Low temperature firing and microwave dielectric properties of Bi4-xGe3O12-1.5x ceramics Article 10.1016/j.ceramint.2016.11.121 1 CERAMICS INTERNATIONAL, v.43, no.2, pp.2801 - 2806 CERAMICS INTERNATIONAL 43 2 2801 2806 scie scopus 000390732100162 2-s2.0-85006384982 Materials Science, Ceramics Materials Science Article BISMUTH-GERMANATE GLASS DETECTORS POROSITY MN Bi(4-x)Ge(3)O(12-1.5x)ceramics Bi2O3 deficiency Low-temperature firing Microwave dielectric properties