Kim, Seong Kwang Geum, Dae-Myeong Shim, Jae-Phil Kim, Chang Zoo Kim, Hyung-Jun Song, Jin Dong Choi, Won Jun Choi, Sung-Jin Kim, Dae Hwan Kim, Sanghyeon Kim, Dong Myong 2024-01-20T02:31:07Z 2024-01-20T02:31:07Z 2021-09-01 2017-01-23 0003-6951 https://pubs.kist.re.kr/handle/201004/123179 In this work, we fabricated the In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors (MOSFETs) with a MOS interface of Y2O3/In0.53Ga0.47As and recessed gate structure. We investigated the interfacial properties of the gate stack and the junction characteristics of the fabricated MOSFETs. Low subthreshold slope (SS = 110mV/dec), high on/off current ratio (I-on/I-off = 10 6), and high effective mobility of 1600 cm(2)/V.s were achieved in the MOSFETs at a sheet charge density (N-s) = 1.2 x 10(12) cm(-2). From the temperature dependence of I-V characteristics, the interface trap density was extracted to be D-it = 2.2 x 10(11) cm(-2).eV(-1) with a negligible trap-assisted leakage current. Published by AIP Publishing. English AMER INST PHYSICS FIELD-EFFECT TRANSISTORS IMPACT Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density Article 10.1063/1.4974893 1 APPLIED PHYSICS LETTERS, v.110, no.4 APPLIED PHYSICS LETTERS 110 4 scie scopus 000392837300044 2-s2.0-85010471375 Physics, Applied Physics Article FIELD-EFFECT TRANSISTORS IMPACT