Seo, Juhee Cho, Seong Won Ahn, Hyung-Woo Cheong, Byung-Ki Lee, Suyoun 2024-01-20T02:31:25Z 2024-01-20T02:31:25Z 2021-09-05 2017-01-15 0925-8388 https://pubs.kist.re.kr/handle/201004/123194 We have studied the effect of the electrode material on the switching behavior of the Ovonic Threshold Switch (OTS) composed of metal/amorphous Ge60Se40/metal. The switching voltage is found to depend strongly on the electrode material, showing a much lower value (similar to 1.74 V) for Mo compared to that (similar to 5.85 V) of TiN. As the origin, the Schottky barrier and the interface trap states are examined, leading to a conclusion that the latter plays a crucial role. These results are interpreted by a picture of carrier transport at a metal/amorphous chalcogenide interface, providing an effective method to modulate the switching characteristics of the OTS device for various applications. (C) 2016 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA SEMICONDUCTORS STATES MODEL ALLOYS GLASS GAP A study on the interface between an amorphous chalcogenide and the electrode: Effect of the electrode on the characteristics of the Ovonic Threshold Switch (OTS) Article 10.1016/j.jallcom.2016.08.237 1 JOURNAL OF ALLOYS AND COMPOUNDS, v.691, pp.880 - 883 JOURNAL OF ALLOYS AND COMPOUNDS 691 880 883 scie scopus 000386227900107 2-s2.0-84986558614 Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science Metallurgy & Metallurgical Engineering Article SEMICONDUCTORS STATES MODEL ALLOYS GLASS GAP Chalcogenides Ovonic Threshold Switch (OTS) Interface trap states