Park, Sungchan Seo, Tae Hoon Cho, Hyunjin Min, Kyung Hyun Lee, Dong Su Won, Dong-Il Kang, Sang Ook Kim, Myung Jong 2024-01-20T02:31:41Z 2024-01-20T02:31:41Z 2021-09-04 2017-01-11 2045-2322 https://pubs.kist.re.kr/handle/201004/123209 A novel and facile synthetic method for h-BN films from borazine oligomer (B3N3H4) x precursors has been developed. This method only includes spin-coating of borazine oligomer onto nickel catalysts and a subsequent annealing step. Large areal and highly crystalline h-BN films were obtained. The stoichiometric B/N ratio of borazine oligomer precursor was preserved in the final h-BN product such that it was close to 1 as revealed by XPS. Catalytic effect of nickel for h-BN formation was clearly demonstrated by lowering crystallization temperature compared to the growth condition in the absence of catalyst. The graphene field effect transistor (GFET) characterization has proved the high quality synthesis of h-BN films, showing the shift of neutrality point and the increase of the mobility. This method can also provide functional h-BN coating on various surfaces by annealing Ni-coated borazine oligomer films and subsequent removal of Ni catalyst. English NATURE PUBLISHING GROUP CHEMICAL-VAPOR-DEPOSITION SPIN-COATING PROCESS GRAPHENE ELECTRONICS POLYMERIC PRECURSOR FILMS SCALE NANOSHEETS SHEETS TRANSISTORS CONVERSION Facile Synthesis of Highly Crystalline and Large Areal Hexagonal Boron Nitride from Borazine Oligomers Article 10.1038/srep40260 1 SCIENTIFIC REPORTS, v.7 SCIENTIFIC REPORTS 7 scie scopus 000391675700001 2-s2.0-85009285040 Multidisciplinary Sciences Science & Technology - Other Topics Article CHEMICAL-VAPOR-DEPOSITION SPIN-COATING PROCESS GRAPHENE ELECTRONICS POLYMERIC PRECURSOR FILMS SCALE NANOSHEETS SHEETS TRANSISTORS CONVERSION h-BN white graphene borazine oligomer facile synthesis