Shin, Y. H. Kim, Yongmin Song, J. D. 2024-01-20T02:32:12Z 2024-01-20T02:32:12Z 2021-09-05 2017-01 0374-4884 https://pubs.kist.re.kr/handle/201004/123237 InAs quantum dots (QDs) were grown grown in an Al0.95Ga0.05As matrix by using the molecularbeam epitaxy technique. Photoluminescence (PL) measurements were made as functions of the magnetic fields and the temperature. Two prominent PL transitions were observed from QDs and defects in the matrix layer at 5 K. In magnetic fields, the transition from QDs does not change its spectral shape at magnetic fields up to 15 T, whereas the defect-related transition shows a blue-shift at magnetic fields above 8 T. By varying the temperature from 5 K to room temperature, the transition from QDs persists up to similar to 200 K and the defects-related transition quenches quickly near 70 K. The activation energies obtained by using an Arrhenius fitting of the PL intensities indicate that the excitons dissociated by thermal energy transfer into higher energy levels. English KOREAN PHYSICAL SOC TEMPERATURE-DEPENDENCE EXCITONS Optical quenching mechanism in InAs quantum dots in an Al0.95Ga0.05As matrix Article 10.3938/jkps.70.104 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.70, no.1, pp.104 - 107 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 70 1 104 107 scie scopus kci ART002190215 000392669400018 2-s2.0-85009829557 Physics, Multidisciplinary Physics Article TEMPERATURE-DEPENDENCE EXCITONS Quantum dot Photoluminescence Exciton