Choi, Yong Gyu Shin, Sang Yeol Golovchak, Roman Cheong, Byung-ki Jain, Himanshu 2024-01-20T03:01:02Z 2024-01-20T03:01:02Z 2021-09-04 2016-11-25 0925-8388 https://pubs.kist.re.kr/handle/201004/123416 EXAFS analysis is performed on equiatomic GeSe and GeTe films to elucidate changes in the local atomic environments induced by crystallization. It reveals for both the films that the 4:2 configuration dominates in their as-deposited amorphous state. In their crystallized state, however, the 3:3 configuration prevails together with quasi-crystalline Ge clusters. The two chalcogenide films exhibit very similar characteristics such as hidden glass transition phenomenon during heating, dominance of the 3:3 configuration in their melt state, decreased optical bandgap upon crystallization, and reduced temperature dependence of electrical conduction accompanied with crystallization. These common properties are partly attributed to the structural changes identified through our EXAFS analysis. In particular, their previously reported non-ohmic current-voltage behaviors associated with the phase switching and the threshold switching are explained in terms of the local structural information. The special phase-change properties of the equiatomic GeSe film is explicated by its amorphous structure. (C) 2016 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA PHASE-CHANGE MATERIALS ABSORPTION FINE-STRUCTURE AMORPHOUS THIN-FILMS OPTICAL-PROPERTIES LOCAL-STRUCTURE CHANGE MEMORY GLASSES ALLOYS SE EDGE Comparative study of atomic arrangements in equiatomic GeSe and GeTe films before and after crystallization Article 10.1016/j.jallcom.2016.06.021 1 JOURNAL OF ALLOYS AND COMPOUNDS, v.686, pp.273 - 280 JOURNAL OF ALLOYS AND COMPOUNDS 686 273 280 scie scopus 000382228300035 2-s2.0-84974715651 Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science Metallurgy & Metallurgical Engineering Article PHASE-CHANGE MATERIALS ABSORPTION FINE-STRUCTURE AMORPHOUS THIN-FILMS OPTICAL-PROPERTIES LOCAL-STRUCTURE CHANGE MEMORY GLASSES ALLOYS SE EDGE Amorphous chalcogenide film EXAFS analysis Electrical properties Phase change material Threshold switching device