Shim, Jae-Phil Seong, Won-Seok Min, Jung-Hong Kong, Duk-Jo Seo, Dong-Ju Kim, Hyung-jun Lee, Dong-Seon 2024-01-20T03:01:12Z 2024-01-20T03:01:12Z 2021-09-04 2016-11-18 0957-4484 https://pubs.kist.re.kr/handle/201004/123424 We introduce ITO on graphene as a current-spreading layer for separated InGaN/GaN nanorod LEDs for the purpose of passivation-free and high light-extraction efficiency. Transferred graphene on InGaN/GaN nanorods effectively blocks the diffusion of ITO atoms to nanorods, facilitating the production of transparent ITO/graphene contact on parallel-nanorod LEDs, without filling the air gaps, like a bridge structure. The ITO/graphene layer sufficiently spreads current in a lateral direction, resulting in uniform and reliable light emission observed from the whole area of the top surface. Using KOH treatment, we reduce series resistance and reverse leakage current in nanorod LEDs by recovering the plasma-damaged region. We also control the size of the nanorods by varying the KOH treatment time and observe strain relaxation via blueshift in electroluminescence. As a result, bridge-structured LEDs with 8 min of KOH treatment show 15 times higher light-emitting efficiency than with 2 min of KOH treatment. English IOP PUBLISHING LTD LIGHT-EMITTING-DIODES ETCH DAMAGE GAN ARRAYS ENHANCEMENT Size-controlled InGaN/GaN nanorod LEDs with an ITO/graphene transparent layer Article 10.1088/0957-4484/27/46/465202 1 NANOTECHNOLOGY, v.27, no.46 NANOTECHNOLOGY 27 46 scie scopus 000386503200001 2-s2.0-84992718264 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article LIGHT-EMITTING-DIODES ETCH DAMAGE GAN ARRAYS ENHANCEMENT LEDs ITO/graphene transparent layer InGaN/GaN nanorods KOH treatment