Chun, Dong Won Kim, Tae Kyoung Choi, Duyoung Caldwell, Elizabeth Kim, Young Jin Paik, Jae Cheol Jin, Sungho Chen, Renkun 2024-01-20T03:01:28Z 2024-01-20T03:01:28Z 2021-09-05 2016-11-11 0957-4484 https://pubs.kist.re.kr/handle/201004/123439 In this work, vertically aligned Si nanowire arrays were fabricated by magnetically guided metal-assisted directional chemical etching. Using an anodized aluminum oxide template as a shadow mask, nanoscale Ni dot arrays were fabricated on an Si wafer to serve as a mask to protect the Si during the etching. For the magnetically guided chemical etching, we deposited a tri-layer metal catalyst (Au/Fe/Au) in a Swiss-cheese configuration and etched the sample under the magnetic field to improve the directionality of the Si nanowire etching and increase the etching rate along the vertical direction. After the etching, the nanowires were dried with minimal surface-tension-induced aggregation by utilizing a supercritical CO2 drying procedure. High-resolution transmission electron microscopy (HR-TEM) analysis confirmed the formation of single-crystal Si nanowires. The method developed here for producing vertically aligned Si nanowire arrays could find a wide range of applications in electrochemical and electronic devices. English IOP PUBLISHING LTD SILICON NANOWIRES DIAMETER MORPHOLOGY CATALYSTS GROWTH LAYERS Vertical Si nanowire arrays fabricated by magnetically guided metal-assisted chemical etching Article 10.1088/0957-4484/27/45/455302 1 NANOTECHNOLOGY, v.27, no.45 NANOTECHNOLOGY 27 45 scie scopus 000386042000001 2-s2.0-84991710771 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article SILICON NANOWIRES DIAMETER MORPHOLOGY CATALYSTS GROWTH LAYERS magnetically guided etching metal-assisted chemical etching Si nanowire anodic aluminum oxide nano-patterning