Jeon, Hwan-Jin Jeong, Hyeon Su 2024-01-20T03:02:34Z 2024-01-20T03:02:34Z 2021-09-05 2016-11 1598-5032 https://pubs.kist.re.kr/handle/201004/123499 We describe a highly efficient technique for nanostructuring silicon (Si) wafer surfaces with high-resolution (<15 nm) and high aspect ratio (20) structures without any deposition processes. Our strategy is based on advanced secondary sputtering lithography (SSL), which combines physical and chemical plasma etching during an ion bombardment process. Compared with general SSL techniques using Ar gas only, the reactive radicals assisted the SSL and promoted the Si etching rate to simultaneously deposit the etched Si materials onto the side surface of a pre-patterned polymer. In addition, various three-dimensional Si nanostructure shapes could be developed simply by controlling the pre-patterned polymer, thereby providing a simple and versatile approach to customizing this technique. English 한국고분자학회 The High-Resolution Nanostructuring of Si wafer Surface with 10 nm Scale Using a Combined Ion bombarding Technique and Chemical Reaction Article 10.1007/s13233-016-4136-z 1 Macromolecular Research, v.24, no.11, pp.1014 - 1019 Macromolecular Research 24 11 1014 1019 N scie scopus kci ART002166492 000389799600010 2-s2.0-84991738042 Polymer Science Polymer Science Article ARRAYS LITHOGRAPHY FABRICATION SINGLE FILMS silicon nano-structure high resolution secondary sputtering lithography plasma