Lee, Young Tack Hwang, Do Kyung Choi, Won Kook 2024-01-20T03:04:23Z 2024-01-20T03:04:23Z 2021-09-05 2016-10 0374-4884 https://pubs.kist.re.kr/handle/201004/123596 Two-dimensional (2D) van der Waals (vdW) atomic crystals have been extensively studied and significant progress has been made. The newest 2D vdW material, called black phosphorus (BP), has attracted considerable attention due to its unique physical properties, such as its being a singlecomponent material like graphene, and its having a high mobility and direct band gap. Here, we report on a high-performance BP nanosheet based ferroelectric field effect transistor (FeFET) with a poly(vinylidenefluoride-trifluoroethylene) top-gate insulator for a nonvolatile memory application. The BP FeFETs show the highest linear hole mobility of 563 cm2/Vs and a clear memory window of more than 15 V. For more advanced nonvolatile memory circuit applications, two different types of resistive-load and complementary ferroelectric memory inverters were implemented, which showed distinct memory on/off switching characteristics. English 한국물리학회 High-performance black phosphorus top-gate ferroelectric transistor for nonvolatile memory applications Article 10.3938/jkps.69.1347 1 Journal of the Korean Physical Society, v.69, no.8, pp.1347 - 1351 Journal of the Korean Physical Society 69 8 1347 1351 N scie scopus kci ART002162942 000387383700012 2-s2.0-85013872760 Physics, Multidisciplinary Physics Article FIELD-EFFECT TRANSISTORS P-N DIODE LAYER METAL GAP HETEROJUNCTION JUNCTIONS CONTACTS MOBILITY Nonvolatile memory Black Phosphorus (BP) Ferroelectric field-effect transistor (FeFET)