Min, Jung-Hong Seo, Tae Hoon Choi, Sang-Bae Kim, Kiyoung Lee, Jun-Yeob Park, Mun-Do Kim, Myung Jong Suh, Eun-Kyung Kim, Jong-Ryeol Lee, Dong-Seon 2024-01-20T03:04:26Z 2024-01-20T03:04:26Z 2021-09-05 2016-10 1567-1739 https://pubs.kist.re.kr/handle/201004/123599 We have demonstrated the effect of p-GaN hole concentration on a graphene current spreading layer (CSL) for stabilization and improved performance of a near-ultraviolet light-emitting diode (NUV LED). While NUV LEDs with a more lightly-doped p-GaN showed poor electrical and optical properties and unstable performance, NUV LEDs with more heavily-doped p-GaN (similar to 2 x 10(17) cm(-3)) showed very stable, outstanding performance. The main factor of the improvement was the enhanced contact property between the graphene CSLs and the p-GaN that resulted from the increase of the hole concentration, which led to a thinner barrier and an enhanced current injection. From our results, we were able to determine that hole concentration as heavy as 2 x 10(17) cm(-3) in p-GaN layers is a primary condition in NUV LEDs with graphene-based CSLs. (C) 2016 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV Effect of p-GaN hole concentration on the stabilization and performance of a graphene current spreading layer in near-ultraviolet light-emitting diodes Article 10.1016/j.cap.2016.08.006 1 CURRENT APPLIED PHYSICS, v.16, no.10, pp.1382 - 1387 CURRENT APPLIED PHYSICS 16 10 1382 1387 scie scopus kci ART002160548 000384132100019 2-s2.0-84982095781 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article p-GaN Hole concentration Graphene Current spreading layer Light-emitting diode