Jun, Dong-Hwan Jeong, Hae Yong Kim, Youngjo Shin, Chan-Soo Park, Kyung Ho Park, Won-Kyu Kim, Min-Su Kim, Sangin Han, Sang Wook Moon, Sung 2024-01-20T03:04:27Z 2024-01-20T03:04:27Z 2021-09-05 2016-10 0374-4884 https://pubs.kist.re.kr/handle/201004/123600 In this paper, a p-type diffusion process based literally on single-step metal-organic vapor-phase diffusion (MOVPD) employing diethyl zinc as the diffusion source in combination with the recessetching technique is developed to improve the dark-current characteristics of planar-type avalanche photodiodes (APDs). The developed single-step MOVPD process exhibits on excellent linear relationship between the diffusion depth and the square root of the diffusion time, which mainly results from maintaining constant source diffusion. The single-step MOVPD process without any additional thermal activation process achieves a surface doping concentration of 1.9 x 10(18) cm (-3), which is sufficient to form ohmic contact. The measured diffusion profiles of the APDs clearly reveal the presence of a two-dimensional diffusion front formed by the recess-etched and guard-ring regions. The impact of this p-type diffusion process on the performance of the APD devices has also been demonstrated by exhibiting improved dark-current characteristics for the fabricated APDs. English KOREAN PHYSICAL SOC ZN DIFFUSION PHOTON DETECTION INP INGAAS/INP DIODES Single-step metal-organic vapor-phase diffusion for low-dark-current planar-type avalanche photodiodes Article 10.3938/jkps.69.1341 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.69, no.8, pp.1341 - 1346 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 69 8 1341 1346 scie scopus kci ART002162924 000387383700011 2-s2.0-85013906023 Physics, Multidisciplinary Physics Article ZN DIFFUSION PHOTON DETECTION INP INGAAS/INP DIODES Photodiodes III-V materials diffusion