Bae, Hyojung Kim, Eunsook Park, Jun-Beom Fujii, Katsushi Lee, Sanghyun Lee, Hyo-Jong Ryu, Sang-Wan Lee, June Key Ha, Jun-Seok 2024-01-20T03:30:34Z 2024-01-20T03:30:34Z 2021-09-05 2016-10 1533-4880 https://pubs.kist.re.kr/handle/201004/123630 This study investigates the effects of the doping flux of magnesium (Mg) on the photoelectrochemical (PEC) properties of p-type GaN. The Mg-doped GaN samples were deposited directly on c-plane Al2O3 substrates by metalorganic chemical vapor deposition (MOCVD). The Mg flux during growth was controlled by a mass flow controller at flows of 50, 100, 200, and 500 sccm. Optical property analysis revealed band-gaps for the films between 3.2 eV and 3.4 eV. The PEC properties of the films were examined by potentiostat with a three-electrode configuration. The photocurrent density of the 200 sccm sample was the highest, which would be attributed to vacancies or other intrinsic defects, such as interstitials and antisites, giving n-type conductivity. English AMER SCIENTIFIC PUBLISHERS WATER Influence of Mg Flux on the Photoelectrochemical Properties of p-Type GaN for Hydrogen Production Article 10.1166/jnn.2016.13209 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.10, pp.10635 - 10638 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 16 10 10635 10638 scie scopus 000387100600088 2-s2.0-84991106572 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article WATER Gallium Nitride Photoelectrochemical Cell Magnesium Flux