Lim, Hyungkwang Soni, Rohit Kim, Dohun Kim, Guhyun Kornijcuk, Vladimir Kim, Inho Park, Jong-Keuk Hwang, Cheol Seong Jeong, Doo Seok 2024-01-20T03:32:56Z 2024-01-20T03:32:56Z 2021-09-03 2016-09 2040-3364 https://pubs.kist.re.kr/handle/201004/123757 We present 'unusual' resistive switching behaviours in electrochemical metallization (ECM) cells utilizing a dual-layer (SiOx/GeSex: SiOx on GeSex) solid electrolyte (SE). The observed switching behaviour markedly varies with the thickness of the upper SiOx layer and compliance current: (i) monostable switching, (ii) counter-eightwise bipolar switching, and (iii) combination of monostable and eightwise bipolar switching behaviours. Focusing on cases (i) and (iii), electrical and chemical analyses on these chameleonic cells were performed in an attempt to gain clues to the understanding of the observed complexity. The chemical analysis indicated the upper SiOx layer as a chemical potential well for Cu ions-Cu ions were largely confined in the well. This non-uniform distribution of Cu across the SE perhaps hints at the mechanism for the complex behaviour; it may be a 'zero-sum game' between SiOx and GeSex layers, in which the two layers fight over the limited number of Cu atoms/ions. English ROYAL SOC CHEMISTRY ATOMIC SWITCH MEMORY CELLS NANOIONICS SYNAPSES BIPOLAR CU Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours Article 10.1039/c6nr04072a 1 NANOSCALE, v.8, no.34, pp.15621 - 15628 NANOSCALE 8 34 15621 15628 scie scopus 000382053300023 2-s2.0-84984595868 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Chemistry Science & Technology - Other Topics Materials Science Physics Article ATOMIC SWITCH MEMORY CELLS NANOIONICS SYNAPSES BIPOLAR CU