Ji, Yongsung Yang, Yang Lee, Seoung-Ki Ruan, Gedeng Kim, Tae-Wook Fei, Huilong Lee, Seung-Hoon Kim, Dong-Yu Yoon, Jongwon Tour, James M. 2024-01-20T03:34:23Z 2024-01-20T03:34:23Z 2021-09-04 2016-08 1936-0851 https://pubs.kist.re.kr/handle/201004/123836 Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates. Here, we introduced a flexible nanoporous (NP) WO3-x RRAM device using anodic treatment in a room-temperature process. The flexible NP WO3-x RRAM device showed bipolar switching characteristics and a high I-ON/IOFF ratio of similar to 10(5). The device also showed stable retention time over 5 X 10(5) s, outstanding cell-to-cell uniformity, and bending endurance over 10(3) cycles when maximum bending conditions. English AMER CHEMICAL SOC RESISTANCE SWITCHING CHARACTERISTICS MEMRISTIVE DEVICES THIN-FILM NANOSHEETS EVOLUTION RERAM Flexible Nanoporous WO3-x Nonvolatile Memory Device Article 10.1021/acsnano.6b02711 1 ACS NANO, v.10, no.8, pp.7598 - 7603 ACS NANO 10 8 7598 7603 scie scopus 000381959100042 2-s2.0-84983399558 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article RESISTANCE SWITCHING CHARACTERISTICS MEMRISTIVE DEVICES THIN-FILM NANOSHEETS EVOLUTION RERAM resistive random access memory flexible memory WO3-x memory nanoporous