Lee, Young Tack Lee, Junyeong Ju, Hyunsu Lim, Jung Ah Yi, Yeonjin Choi, Won Kook Hwang, Do Kyung Im, Seongil 2024-01-20T03:34:28Z 2024-01-20T03:34:28Z 2021-09-04 2016-08 1616-301X https://pubs.kist.re.kr/handle/201004/123841 2D van der Waals atomic crystal materials have great potential for use in future nanoscale electronic and optoelectronic applications owing to their unique properties such as a tunable energy band gap according to their thickness or number of layers. Recently, black phosphorous (BP) has attracted significant interest because it is a single-component material like graphene and has high mobility, a direct band gap, and exhibits ambipolar transition behavior. This study reports on a charge injection memory field-effect transistor on a glass substrate, where few-layer BPs act as the active channel and charge trapping layers, and Al2O3 films grown by atomic layer deposition act as the tunneling and blocking layers. Because of the ambipolar properties of BP nanosheets, both electrons and holes are involved in the charge trapping process, resulting in bilateral threshold voltage shifts with a large memory window of 22 V. Finally, a memory circuit of a resistive-load inverter is implemented that converts analog signals (current) to digital signals (voltage). Such a memory inverter also shows a clear memory window and distinct memory on/off switching characteristics. English John Wiley & Sons Ltd. Nonvolatile Charge Injection Memory Based on Black Phosphorous 2D Nanosheets for Charge Trapping and Active Channel Layers Article 10.1002/adfm.201602113 1 Advanced Functional Materials, v.26, no.31, pp.5701 - 5707 Advanced Functional Materials 26 31 5701 5707 N scie scopus 000383568300011 2-s2.0-84973526753 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article MOBILITY GUANINE LOGIC GATE GAP FIELD-EFFECT TRANSISTORS GRAPHENE METAL TRANSITION 2D nanosheet transistor black phosphorous (BP) charge injection trapping nonvolatile memory