Park, Ah Hyun Chandramohan, S. Seo, Tae Hoon Lee, Gun Hee Min, Kyung Hyun Hong, Chang-Hee Kim, Myung Jong Suh, Eun-Kyung 2024-01-20T04:00:32Z 2024-01-20T04:00:32Z 2021-09-05 2016-07-08 0957-4484 https://pubs.kist.re.kr/handle/201004/123874 Using single-walled carbon nanotubes (SWCNTs) as nanomasks on an undoped GaN template, a significant biaxial stress relaxation was achieved in the subsequently-grown Si-doped n-GaN layer. Enhanced near band edge (NBE) emission intensity, similar free carrier concentrations, and the reduced peak width of the asymmetric (102) crystallographic plane all confirmed the suppression of threading dislocations due to the nanoepitaxial growth process. Temperature-dependent photoluminescence (PL) revealed improved internal quantum efficiency (IQE) of InGaN/GaN multi-quantum wells (MQWs) grown on this n-GaN layer. Furthermore, enhanced light output power and a remarkable reduction in efficiency droop were observed for the blue light-emitting diodes (LEDs), especially at higher injection currents. Our results emphasize the strong potential for SWCNTs as nanomasks in the heteroepitaxy of GaN-based devices without the exploitation of complicated lithography or etching processes. English IOP PUBLISHING LTD THREADING DISLOCATION DENSITY EFFICIENCY DROOP RELAXATION QUALITY STRESS WELLS Carbon-nanotube-assisted nanoepitaxy of Si-doped GaN for improved performance of InGaN/GaN light-emitting diodes Article 10.1088/0957-4484/27/27/275602 1 NANOTECHNOLOGY, v.27, no.27 NANOTECHNOLOGY 27 27 scie scopus 000377493700017 2-s2.0-84975074993 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article THREADING DISLOCATION DENSITY EFFICIENCY DROOP RELAXATION QUALITY STRESS WELLS carbon nanotubes nanoepitaxy Si-doped GaN stress relaxation multi-quantum wells efficiency droop