Im, Mir Lee, Tae-Ho Kweon, Sang-Hyo Kang, Chong-Yun Nahm, Sahn 2024-01-20T04:01:13Z 2024-01-20T04:01:13Z 2021-09-04 2016-07 1229-9162 https://pubs.kist.re.kr/handle/201004/123910 (Zr,Ti)(0.85)(Ca,Sr)(0.15)O-1.85 (ZTCS) films grown on Cu electrode at room temperature showed a crystalline cubic stabilized ZrO2 structure when large sputtering powers (>= 75 W) were used. The smoothest film, grown at sputtering power of 75W, showed the lowest leakage current (4.0 x 10(-6) A/cm(2) at 0.75 MV/cm) and highest breakdown voltage (2.7 MV/cm) among all the films prepared, indicating that surface roughness considerably influences the electrical properties of the ZTCS film. A dielectric constant (k) of 21.5 and a tan delta of 0.007 were obtained at 100 kHz, and a similar k of 19.4 with a high quality factor of 52 at 2.0 GHz. Moreover, a high capacitance density (78 nF/cm(2)) and a small TCC (256 ppm/degrees C at 100 kHz) were obtained. Such a ZTCS film therefore satisfies the requirements of the International Technology Roadmap for Semiconductors for capacitors grown on organic substrates for 2016. English 세라믹공정연구센터 Structural and electrical properties of (Zr,Ti)(0.85)(Ca,Sr)(0.15)O-1.85 thin films grown on Cu/Ti/SiO2/Si substrate using RF magnetron sputtering Article 10.36410/jcpr.2016.17.7.717 1 Journal of Ceramic Processing Research, v.17, no.7, pp.717 - 721 Journal of Ceramic Processing Research 17 7 717 721 N scie scopus kci ART002327507 000383893000012 2-s2.0-84988529726 Materials Science, Ceramics Materials Science Article IONIC-CONDUCTIVITY CAPACITORS ELECTROLYTES DEPOSITION PASSIVES BEHAVIOR Dielectric Thin Film Embedded Capacitor