Lee, Young Tack Choi, Won Kook Hwang, Do Kyung 2024-01-20T04:02:08Z 2024-01-20T04:02:08Z 2021-09-05 2016-06 0003-6951 https://pubs.kist.re.kr/handle/201004/123958 We report on a chemical free one-off imprinting method to fabricate two dimensional (2D) van der Waals (vdWs) materials based transistors. Such one-off imprinting technique is the simplest and effective way to prevent unintentional chemical reaction or damage of 2D vdWs active channel during device fabrication process. 2D MoS2 nanosheets based transistors with a hexagonal-boron-nitride (h-BN) passivation layer, prepared by one-off imprinting, show negligible variations of transfer characteristics after chemical vapor deposition process. In addition, this method enables the fabrication of all 2D MoS2 transistors consisting of h-BN gate insulator, and graphene source/drain and gate electrodes without any chemical damage. English American Institute of Physics Chemical free device fabrication of two dimensional van der Waals materials based transistors by using one-off stamping Article 10.1063/1.4954223 1 Applied Physics Letters, v.108, no.25 Applied Physics Letters 108 25 N scie scopus 000379039900031 2-s2.0-84975860046 Physics, Applied Physics Article FIELD-EFFECT TRANSISTORS SINGLE-LAYER MOS2 GRAPHENE PERFORMANCE CIRCUITS two dimensional (2D) van derWaals (vdWs) materials chemical free one-off imprinting method