Veal, Boyd W. Kim, Seong Keun Zapol, Peter Iddir, Hakim Baldo, Peter M. Eastman, Jeffrey A. 2024-01-20T04:02:45Z 2024-01-20T04:02:45Z 2021-09-05 2016-06 2041-1723 https://pubs.kist.re.kr/handle/201004/123993 Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment. English NATURE PUBLISHING GROUP TOTAL-ENERGY CALCULATIONS EXCHANGE GAS (LA,SR)COO3/(LA,SR)(2)COO4 ENHANCEMENT STORAGE Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures Article 10.1038/ncomms11892 1 NATURE COMMUNICATIONS, v.7 NATURE COMMUNICATIONS 7 scie scopus 000378008200001 2-s2.0-84974651708 Multidisciplinary Sciences Science & Technology - Other Topics Article TOTAL-ENERGY CALCULATIONS EXCHANGE GAS (LA,SR)COO3/(LA,SR)(2)COO4 ENHANCEMENT STORAGE In2O3 oxygen vacancy ionic conduction