Lee, In Hak Joo, Beom Soo Kim, Hyuk Jin Yun, Ye Seul Jang, Seun Yup Kang, Min Gyu Kang, Chong Yun Park, Byeong-Gyu Han, Moonsup Chang, Young Jun 2024-01-20T04:03:04Z 2024-01-20T04:03:04Z 2021-09-05 2016-06 1567-1739 https://pubs.kist.re.kr/handle/201004/124010 We investigated impact of excimer laser annealing on the AlGaN/GaN heterojunction structures, where the 2-dimensional electron gas (2DEG) is formed. When applying homogeneous laser pulses at various laser densities, the electrical resistance of the 2DEG shows sudden increase along with sharp decrease of the carrier mobility and slight decrease of the carrier density. Especially, when applying laser density of 300 mJ/cm(2), we could obtain such jump of electrical resistance even after 2 min, i.e. 2400 pulses at 20 Hz. Low temperature photoluminescence and x-ray photoemission spectroscopy measurements show that the excimer laser annealing suppresses the coherent charge carriers and oxides the sample surface to form Ga2O. We estimate the activation energy of suppressing 2DEG to be 0.89 eV for the ELA process. We suggest that the excimer laser annealing has potential for gate oxide fabrication, surface passivation, and lateral pattering of 2DEG structures. (C) 2016 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV POWER ELECTRONICS APPLICATIONS MG-DOPED GAN POLARIZATION IRRADIATION SURFACE LAYERS FILMS Excimer laser annealing effects on AlGaN/GaN heterostructures Article 10.1016/j.cap.2016.03.013 1 CURRENT APPLIED PHYSICS, v.16, no.6, pp.628 - 632 CURRENT APPLIED PHYSICS 16 6 628 632 scie scopus kci ART002116860 000374659600004 2-s2.0-84961678096 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article POWER ELECTRONICS APPLICATIONS MG-DOPED GAN POLARIZATION IRRADIATION SURFACE LAYERS FILMS GaN Laser annealing Hall measurement PL XPS