Roh, I. P. Kang, N. S. Shin, S. H. Oh, Y. T. Kim, K. B. Song, J. D. Song, Y. H. 2024-01-20T04:03:44Z 2024-01-20T04:03:44Z 2021-09-05 2016-05-26 0013-5194 https://pubs.kist.re.kr/handle/201004/124046 The memory characteristics of a capacitor with polycrystalline gallium arsenide (poly-GaAs) as a floating gate material have been evaluated, and compared with a capacitor using poly-silicon (poly-Si). The poly-GaAs film with thickness of 100 nm was successfully grown on silicon at 250 degrees C, using an arsenide beam flux, in a molecular beam epitaxy chamber. Based on the optical and electrical evaluation, this film appeared to have obvious poly-GaAs. Here, the measured the memory window by comparing it to a conventional device with a poly-Si floating gate, which showed it to have approximately twice the value of the poly-Si. Based on these results, poly-GaAs floating material can be considered to be a candidate for a wider memory window in scaled two-dimensional flash memory. English INST ENGINEERING TECHNOLOGY-IET Memory characteristics of capacitors with poly-GaAs floating gates Article 10.1049/el.2015.3823 1 ELECTRONICS LETTERS, v.52, no.11, pp.963 - 964 ELECTRONICS LETTERS 52 11 963 964 scie scopus 000377433800041 2-s2.0-84969800065 Engineering, Electrical & Electronic Engineering Article GaAs Glass Memory poly-crystal capacitor