Choi, Kyunghee Lee, Young Tack Kim, Jin Sung Min, Sung-Wook Cho, Youngsuk Pezeshki, Atiye Hwang, Do Kyung Im, Seongil 2024-01-20T04:04:11Z 2024-01-20T04:04:11Z 2021-09-05 2016-05 1616-301X https://pubs.kist.re.kr/handle/201004/124069 As one of the emerging new transition-metal dichalcogenides materials, molybdenum ditelluride (α-MoTe2) is attracting much attention due to its optical and electrical properties. This study fabricates all-2D MoTe2-based field effect transistors (FETs) on glass, using thin hexagonal boron nitride and thin graphene in consideration of good dielectric/channel interface and source/drain contacts, respectively. Distinguished from previous works, in this study, all 2D FETs with α-MoTe2 nanoflakes are dual-gated for driving higher current. Moreover, for the present 2D dual gate FET fabrications on glass, all thermal annealing and lithography processes are intentionally exempted for fully non-lithographic method using only van der Waal's forces. The dual-gate MoTe2 FET displays quite a high hole and electron mobility over ≈20 cm2 V−1 s−1 along with ON/OFF ratio of ≈105 in maximum as an ambipolar FET and also demonstrates high drain current of a few tens-to-hundred μA at a low operation voltage. It appears promising enough to drive organic light emitting diode pixels and NOR logic functions on glass. English John Wiley & Sons Ltd. Non-Lithographic Fabrication of All-2D alpha-MoTe2 Dual Gate Transistors Article 10.1002/adfm.201505346 1 Advanced Functional Materials, v.26, no.18, pp.3146 - 3153 Advanced Functional Materials 26 18 3146 3153 N scie scopus 000377591500018 2-s2.0-84977934883 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article BAND-GAP GRAPHENE MOTE2 SPECTROSCOPY BN dual-gate field effect transistor graphene h-BN non-lithographic α-MoTe2