Soni, Rohit Petraru, Adrian Nair, Harikrishnan S. Vavra, Ondrej Ziegler, Martin Kim, Seong Keun Jeong, Doo Seok Kohlstedt, Hermann 2024-01-20T04:31:03Z 2024-01-20T04:31:03Z 2021-09-03 2016-05 2040-3364 https://pubs.kist.re.kr/handle/201004/124143 A multiferroic tunnel junction (MFTJ) promisingly offers multinary memory states in response to electric- and magnetic-fields, referring to tunneling electroresistance (TER) and tunneling magnetoresistance (TMR), respectively. In spite of recent progress, a substantial number of questions concerning the understanding of these two intertwined phenomena still remain open, e.g. the role of microstructural/chemical asymmetry at the interfaces of the junction and the effect of an electrode material on the MFTJ properties. In this regard, we look into the multiferroic effect of all-complex-oxide MFTJ (La0.7Sr0.3MnO3/Pb (Zr0.3Ti0.7)O-3/La0.7Sr0.3MnO3). The results reveal apparent TER-TMR interplay-captured by the reversible electric-field control of the TMR effect. Finally, microscopy analysis on the MFTJ revealed that the observed TER-TMR interplay is perhaps mediated by microstructural and chemical asymmetry in our nominally symmetric MFTJ. English ROYAL SOC CHEMISTRY ELECTRORESISTANCE MAGNETORESISTANCE MECHANISMS Polarity-tunable spin transport in all-oxide multiferroic tunnel junctions Article 10.1039/c6nr01277a 1 NANOSCALE, v.8, no.20, pp.10799 - 10805 NANOSCALE 8 20 10799 10805 scie scopus 000377140700036 2-s2.0-84971299632 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Chemistry Science & Technology - Other Topics Materials Science Physics Article ELECTRORESISTANCE MAGNETORESISTANCE MECHANISMS