Kim, Ho Sung Park, Min Su Kim, Sang Hyeon Park, Suk In Song, Jin Dong Kim, Sang Hyuck Choi, Won Jun Park, Jung Ho 2024-01-20T04:31:52Z 2024-01-20T04:31:52Z 2021-09-05 2016-04-01 0040-6090 https://pubs.kist.re.kr/handle/201004/124183 We report the electrical and optical characteristics of indium-tin-oxide (ITO)/GaAs Schottky barrier solar cells (SBSCs) with embedded InAs quantum dots (QDs). Twenty layers of self-assembled InAs QDs are inserted into the SBSCs so as to increase the potential barrier height at the ITO/GaAs junctions and to create additional photo-generated electrons in the quantum confined states of the QDs. After analyzing the current density-voltage characteristics, the photoluminescence, and the external quantum efficiency of the fabricated SBSCs, it was found that the incorporation of InAs QDs into the ITO/GaAs SBSCs results in an increase of both of the open-circuit voltage and the short-circuit current density compared to SBSCs without InAs QDs. (C) 2016 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA Indium-tin-oxide/GaAs Schottky barrier solar cells with embedded InAs quantum dots Article 10.1016/j.tsf.2016.03.025 1 THIN SOLID FILMS, v.604, pp.81 - 84 THIN SOLID FILMS 604 81 84 scie scopus 000373470600013 2-s2.0-84962266879 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article Indiun tin oxide Gallium Arsenide Schottky barrier Indium Arsenide Quantum dots Solar cells