Yoo, Tae-Hee Sang, Byoung-In Wang, Byung-Yong Lim, Dae-Soon Kang, Hyun Wook Choi, Won Kook Lee, Young Tack Oh, Young-Jei Hwang, Do Kyung 2024-01-20T04:32:23Z 2024-01-20T04:32:23Z 2021-09-05 2016-04 0374-4884 https://pubs.kist.re.kr/handle/201004/124211 Amorphous InGaZnO (IGZO) metal-oxide-semiconductor thin-film transistors (TFTs) are one of the most promising technologies to replace amorphous and polycrystalline Si TFTs. Recently, TFT-based sensing platforms have been gaining significant interests. Here, we report on IGZO transistor-based pH sensors in aqueous medium. In order to achieve stable operation in aqueous environment and enhance sensitivity, we used Al2O3 grown by using atomic layer deposition (ALD) and a porous Ag nanowire (NW) mesh as the top gate dielectric and electrode layers, respectively. Such devices with a Ag NW mesh at the top gate electrode rapidly respond to the pH of solutions by shifting the turn-on voltage. Furthermore, the output voltage signals induced by the voltage shifts can be directly extracted by implantation of a resistive load inverter. English 한국물리학회 Metal-oxide thin-film transistor-based pH sensor with a silver nanowire top gate electrode Article 10.3938/jkps.68.901 1 Journal of the Korean Physical Society, v.68, no.7, pp.901 - 907 Journal of the Korean Physical Society 68 7 901 907 N scie scopus kci ART002100117 000374159100012 2-s2.0-84962844810 Physics, Multidisciplinary Physics Article ROOM-TEMPERATURE Silver nanowire pH sensor Metal-oxide thin-film transistor