Rhyee, Jong-Soo Kwon, Junyeon Dak, Piyush Kim, Jin Hee Kim, Seung Min Park, Jozeph Hong, Young Ki Song, Won Geun Omkaram, Inturu Alam, Muhammad A. Kim, Sunkook 2024-01-20T04:33:38Z 2024-01-20T04:33:38Z 2021-09-04 2016-03-23 0935-9648 https://pubs.kist.re.kr/handle/201004/124277 Large-area and highly crystalline CVD-grown multilayer MoSe2 films exhibit a well-defined crystal structure (2H phase) and large grains reaching several hundred micrometers. Multilayer MoSe2 transistors exhibit high mobility up to 121 cm(2) V(-1)s(-1) and excellent mechanical stability. These results suggest that high mobility materials will be indispensable for various future applications such as high-resolution displays and human-centric soft electronics. English WILEY-V C H VERLAG GMBH GRAIN-BOUNDARIES DIRECT BANDGAP ATOMIC LAYERS THIN TRANSPORT High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates Article 10.1002/adma.201504789 1 ADVANCED MATERIALS, v.28, no.12, pp.2316 - 2321 ADVANCED MATERIALS 28 12 2316 2321 scie scopus 000372459600003 2-s2.0-84961780738 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article GRAIN-BOUNDARIES DIRECT BANDGAP ATOMIC LAYERS THIN TRANSPORT insulating substrates MoSe2 single-crystals thin-film transistors transition metal dichalcogenides