Ahn, Jaehyun Chou, Harry Koh, Donghyi Kim, Taegon Roy, Anupam Song, Jonghan Banerjee, Sanjay K. 2024-01-20T04:33:42Z 2024-01-20T04:33:42Z 2021-09-04 2016-03-21 0003-6951 https://pubs.kist.re.kr/handle/201004/124280 Achieving damage-free, uniform, abrupt, ultra-shallow junctions while simultaneously controlling the doping concentration on the nanoscale is an ongoing challenge to the scaling down of electronic device dimensions. Here, we demonstrate a simple method of effectively doping III-V compound semiconductors, specifically InGaAs, by a solid phase doping source. This method is based on the in-diffusion of oxygen and/or silicon from a deposited non-stoichiometric silicon dioxide (SiOx) film on InGaAs, which then acts as donors upon activation by annealing. The dopant profile and concentration can be controlled by the deposited film thickness and thermal annealing parameters, giving active carrier concentration of 1.4 x 10(18) cm(-3). Our results also indicate that conventional silicon based processes must be carefully reviewed for compound semiconductor device fabrication to prevent unintended doping. (C) 2016 AIP Publishing LLC. English AMER INST PHYSICS MOLECULAR-BEAM EPITAXY GAAS OXYGEN DEPENDENCE STRESS DAMAGE Nanoscale doping of compound semiconductors by solid phase dopant diffusion Article 10.1063/1.4944888 1 APPLIED PHYSICS LETTERS, v.108, no.12 APPLIED PHYSICS LETTERS 108 12 scie scopus 000373348000025 2-s2.0-84962195742 Physics, Applied Physics Article MOLECULAR-BEAM EPITAXY GAAS OXYGEN DEPENDENCE STRESS DAMAGE