Toreh, Kirstie Raquel Natalia Kim, Deok Hyeon Dash, Umasankar Phan, The-Long Lee, Bo Wha Jin, Hyun-Woo Lee, Suyoun Park, Bae Ho Park, Ji-Yong Cho, Myung Rae Park, Yun Daniel Acharya, Susant Kumar Yoo, Woosuk Jung, Myung-Hwa Jung, Chang Uk 2024-01-20T05:01:19Z 2024-01-20T05:01:19Z 2021-09-05 2016-02-05 0925-8388 https://pubs.kist.re.kr/handle/201004/124396 SrRu1-xFexO3-d (x = 0.00, 0.05, 0.10, and 0.20) thin films were fabricated to study the intrinsic aspects of a "self spin valve". Using epitaxial strain and high oxygen partial pressure during thin film growth, single phase thin films with negligible oxygen vacancies were successfully grown, and problems related to A-site disorder and grain boundaries were minimized. Under application of an external magnetic field of up to 9 T, the resistivity of all films decreased, resulting in large negative magnetoresistance (up to similar to 14.4%), which was stronger at temperatures in the range 10-30 K. An abrupt metal-insulator transition at T similar to 43 K was found in the x = 0.20 film, which was explained using a two-fluid model related to electron-electron interactions. From the model, two fitting parameters were found to be necessary for in-situ and homogenous defects, while three or unphysical fitting parameters were necessary for ex-situ and inhomogeneous defects. (C) 2015 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA MAGNETIC-PROPERTIES MAGNETORESISTANCE SRRUO3 TRANSITION GROWTH The "self spin valve" in oxygen stoichiometric SrRu1-xFexO3-delta epitaxial thin films Article 10.1016/j.jallcom.2015.10.084 1 JOURNAL OF ALLOYS AND COMPOUNDS, v.657, pp.224 - 230 JOURNAL OF ALLOYS AND COMPOUNDS 657 224 230 scie scopus 000366934800030 2-s2.0-84945308845 Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science Metallurgy & Metallurgical Engineering Article MAGNETIC-PROPERTIES MAGNETORESISTANCE SRRUO3 TRANSITION GROWTH Magnetoresistance Self spin valve A-site disorder Grain boundary Oxygen vacancies Epitaxial thin film