Yang, Hee Yeon Yun, Dong Yeol Kim, Yu Na Hong, Jae Min Kim, Tae Whan 2024-01-20T05:01:47Z 2024-01-20T05:01:47Z 2022-01-25 2016-02 1533-4880 https://pubs.kist.re.kr/handle/201004/124418 Nonvolatile memory devices based on a polydopamine (PDA) layer were fabricated by using a dip-coating process. Atomic force microscopy images revealed that the PDA layer had a conformal surface. The energy dispersive X-ray data showed the atomic stoichiometry of nitrogen and carbon in the PDA layer. The capacitance-voltage (C-V) curves of the Al/PDA/n-Si memory devices at 300 K showed a hysteresis with a large flat band shift, indicating that the incomplete PDA layer acted as a charge storage in the memory device. The switching mechanisms for the writing and erasing processes for the Al/PDA/n-Si devices are described on the basis of the C-V results and the energy band diagrams. English AMER SCIENTIFIC PUBLISHERS Switching Mechanisms of Nonvolatile Memory Devices Fabricated with a Polydopamine Layer Article 10.1166/jnn.2016.11967 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.2, pp.1685 - 1688 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 16 2 1685 1688 N scie scopus 000372358800075 2-s2.0-84959422546 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article SENSITIZED SOLAR-CELLS FLOATING-GATE THIN-FILM COATINGS NANOCOMPOSITES SURFACES Nonvolatile Memory Device Polydopamine Switching Mechanism Capacitance-Voltage