Yoo, Tae-Hee Sang, Byoung-In Hwang, Do Kyung 2024-01-20T05:02:03Z 2024-01-20T05:02:03Z 2021-09-05 2016-03 0374-4884 https://pubs.kist.re.kr/handle/201004/124431 Amorphous InGaZnO (IGZO) is a promising semiconducting material to replace amorphous and polycrystalline Si. IGZO-based field-effect transistors (FET) can be versatile platforms for various electronic or optoelectronic applications. Here, we report on a one-dimensional (1-D) IGZO FET fabricated on a flexible polyimide wire substrate for electronic textiles (e-textiles). This flexible 1-D IGZO FET shows a high mobility of 18.18 cm2/Vs with a relatively good on/off current ratio of 104 at operating voltages below 5 V. Furthermore, a resistive-load inverter is implemented by connecting the 1-D IGZO FET to an external load resistor. Such an inverter exhibits obvious voltage switching characteristics, verifying the potential it is being a basic building block for an e-textile circuit system. English 한국물리학회 One-dimensional InGaZnO Field-effect Transistor on a Polyimide Wire Substrate for an Electronic Textile Article 10.3938/jkps.68.599 1 Journal of the Korean Physical Society, v.68, no.4, pp.599 - 603 Journal of the Korean Physical Society 68 4 599 603 N scie scopus kci ART002084451 000371528200017 2-s2.0-84959487330 Physics, Multidisciplinary Physics Article THIN-FILM TRANSISTORS ROOM-TEMPERATURE WEARABLE ELECTRONICS TRANSPARENT FIBER INVERTER InGaZnO Electronic textiles 1-D field-effect transistor Resistive-load inverter