Ji, Yongsung Cha, An-Na Lee, Sang-A Bae, Sukang Lee, Sang Hyun Lee, Dong Su Choi, Hyejung Wang, Gunuk Kim, Tae-Wook 2024-01-20T05:02:09Z 2024-01-20T05:02:09Z 2021-09-05 2016-02 1566-1199 https://pubs.kist.re.kr/handle/201004/124437 Cross-bar array organic resistive memory devices enable high storage density but suffer from the issue of undesired cross-talk. A one transistor-one resistor (1T-1R) architecture offers a potential solution to this issue. However, all organic based 1T-1R architecture has not yet been demonstrated due to the difficulties in fabrication and operational voltage range mismatching between organic resistive memory and organic transistor. Herein, we demonstrate the first all-organic based 64 bit memory cell array utilizing 1T-1R architecture. The transfer and output curves of transistors in the 1T-1R cell array are governed by the memory cell and the 64 bit array show precise addressing due to gating of transistors. Moreover, the 1T-1R cell array encoded letters based on the standard ASCII character code. (C) 2015 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV NONVOLATILE MEMORY DEVICES DIODE Integrated all-organic 8 x 8 one transistor-one resistor (1T-1R) crossbar resistive switching memory array Article 10.1016/j.orgel.2015.11.020 1 ORGANIC ELECTRONICS, v.29, pp.66 - 71 ORGANIC ELECTRONICS 29 66 71 scie scopus 000368220100011 2-s2.0-84949604509 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article NONVOLATILE MEMORY DEVICES DIODE Nonvolatile memory Organic resistive memory One transistor-one resistor architecture