Ahn, Youngkun Kim, Jungyoon Ganorkar, Shraddha Kim, Young-Hwan Kim, Seong-Il 2024-01-20T05:02:37Z 2024-01-20T05:02:37Z 2021-09-05 2016-02 2158-5849 https://pubs.kist.re.kr/handle/201004/124462 The process of graphene transfer generally involves a polymer support. Thermal annealing of graphene monolayers transferred from Cu to SiO2/Si substrate has been investigated to remove polymethyl methacrylate (PMMA) residue. The results show that a clean graphene surface without any deterioration is difficult to obtain by conventional thermal annealing method owing to the reaction between the graphene and the carbon by-products from the residual polymers. Although a higher annealing temperature facilitates removal of the polymer residue on graphene surface, it may also increase the amount of amorphous carbon. In this work, we examine various annealing conditions to remove the polymer residue. Annealing under H-2 ambience is effective in removing pendant functional groups in the polymer, yet increases the amorphous carbon also. In case of Ar ambience with high temperature, the polymer residue is efficiently removed without amorphous carbon. English AMER SCIENTIFIC PUBLISHERS CHEMICAL-VAPOR-DEPOSITION POLY(METHYL METHACRYLATE) RAMAN-SPECTROSCOPY BIAXIAL STRAIN DEGRADATION CONDUCTIVITY RESOLUTION SPECTRA Thermal annealing of graphene to remove polymer residues Article 10.1166/mex.2016.1272 1 MATERIALS EXPRESS, v.6, no.1, pp.69 - 76 MATERIALS EXPRESS 6 1 69 76 scie scopus 000371194100009 2-s2.0-84949466815 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article CHEMICAL-VAPOR-DEPOSITION POLY(METHYL METHACRYLATE) RAMAN-SPECTROSCOPY BIAXIAL STRAIN DEGRADATION CONDUCTIVITY RESOLUTION SPECTRA Thermal Annealing Transferred Graphene PMMA Amorphous Carbon Ar Ambience