Jeon, Pyo Jin Lee, Young Tack Lim, June Yeong Kim, Jin Sung Hwang, Do Kyung Im, Seongil 2024-01-20T05:02:40Z 2024-01-20T05:02:40Z 2021-09-04 2016-02 1530-6984 https://pubs.kist.re.kr/handle/201004/124465 Black phosphorus (BP) nanosheet is two-dimensional (2D) semiconductor with distinct band gap and attracting recent attention from researches because it has some similarity to gapless 2D semiconductor graphene in the following two aspects: single element (P) for its composition and quite high mobilities depending on its fabrication conditions. Apart from several electronic applications reported with BP nanosheet, here we report for the first time BP nanosheet–ZnO nanowire 2D–1D heterojunction applications for p–n diodes and BP-gated junction field effect transistors (JFETs) with n-ZnO channel on glass. For these nanodevices, we take advantages of the mechanical flexibility of p-type conducting of BP and van der Waals junction interface between BP and ZnO. As a result, our BP–ZnO nanodimension p–n diode displays a high ON/OFF ratio of ∼104 in static rectification and shows kilohertz dynamic rectification as well while ZnO nanowire channel JFET operations are nicely demonstrated by BP gate switching in both electrostatics and kilohertz dynamics. English AMER CHEMICAL SOC Black Phosphorus-Zinc Oxide Nanomaterial Heterojunction for p-n Diode and Junction Field-Effect Transistor Article 10.1021/acs.nanolett.5b04664 1 NANO LETTERS, v.16, no.2, pp.1293 - 1298 NANO LETTERS 16 2 1293 1298 N scie scopus 000370215200070 2-s2.0-84958231478 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article LOGIC INVERTER ZNO NANOWIRES METAL GRAPHENE SEMICONDUCTOR NANOSHEET DEVICE OPTOELECTRONICS TRANSPORT Black phosphorus zinc oxide nanowire heterojunction p-n diode junction field-effect transistor