Noh, Miru Seo, Ilwan Park, Junghyun Chung, J. -S. Lee, Y. S. Kim, Hyuk Jin Chang, Young Jun Park, J. -H. Kang, Min Gyu Kang, Chong Yun 2024-01-20T05:02:48Z 2024-01-20T05:02:48Z 2021-09-04 2016-02 1567-1739 https://pubs.kist.re.kr/handle/201004/124473 We report on the effect of the excimer laser annealing on the electronic properties of indium tin oxide (ITO) sol-gel films by using spectroscopic ellipsometric technique. We found that the excimer laser annealing effectively induces the crystallization as well as condensation of the sol-gel film. As the laser power increased, the carrier concentration and the relaxation time of photo-annealed films increased, with the bandgap shifting to higher energies. Simultaneously, the extinction coefficient values in the visible region were reduced significantly. We suggest that the excimer laser annealing should be a promising method for low temperature preparation of the ITO film on heat-sensitive substrates via the sol-gel process. (C) 2015 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV TIN-OXIDE ELECTRICAL-PROPERTIES TRANSPARENT CRYSTALLIZATION TECHNOLOGY Spectroscopic ellipsometry investigation on the excimer laser annealed indium thin oxide sol-gel films Article 10.1016/j.cap.2015.11.007 1 CURRENT APPLIED PHYSICS, v.16, no.2, pp.145 - 149 CURRENT APPLIED PHYSICS 16 2 145 149 scie scopus kci ART002085243 000366945400006 2-s2.0-84947598156 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article TIN-OXIDE ELECTRICAL-PROPERTIES TRANSPARENT CRYSTALLIZATION TECHNOLOGY Indium tin oxide Excimer laser annealing Spectroscopic ellipsometry Sol-gel