Jyothi, I. Janardhanam, V. Hwang, Jun Yeon Lee, Won-Ki Park, Yun Chang Kang, Hyon Chol Lee, Sung-Nam Choi, Chel-Jong 2024-01-20T05:03:23Z 2024-01-20T05:03:23Z 2021-09-04 2016-01-15 0925-8388 https://pubs.kist.re.kr/handle/201004/124504 We have investigated the microstructural and electrical properties of Cu-germanides formed by the.deposition of Cu on Ge wafer, followed by rapid thermal annealing (RTA) process at the temperatures in the range of 300-700 degrees C. Regardless of RTA temperature, the Cu3Ge was the only phase formed as a result of solid-state reaction between Cu and Ge driven by RTA process. The RTA temperature dependency of specific contact resistivity of Cu3Ge was explained in terms of its structural evolution caused by RTA process. The RTA process at 400 degrees C led to the formation of Cu3Ge film having highly uniform surface and interface morphologies, allowing the minimum value of the specific contact resistivity. The samples annealed above 500 degrees C underwent the severe structural degradation of Cu3Ge, resulting in a rapid increase in the specific contact resistivity. After RTA at 700 degrees C, pyramidal Cu3Ge islands standing on a corner, distributed along Ge <110> direction were formed with epitaxial relationship on underlying Ge. (C) 2015 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA COPPER GERMANIDE CONTACTS FILMS SI EVOLUTION KINETICS LAYER Microstructural and electrical properties of Cu-germanide formed on p-type Ge wafer Article 10.1016/j.jallcom.2015.09.197 1 JOURNAL OF ALLOYS AND COMPOUNDS, v.655, pp.198 - 202 JOURNAL OF ALLOYS AND COMPOUNDS 655 198 202 scie scopus 000364603100028 2-s2.0-84942779342 Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science Metallurgy & Metallurgical Engineering Article COPPER GERMANIDE CONTACTS FILMS SI EVOLUTION KINETICS LAYER Cu-germanide RTA Agglomeration Epitaxial Cu3Ge Specific contact resistivity