Park, Se Jin Jeon, Hyo Sang Cho, Jin Woo Hwang, Yun Jeong Park, Kyung Su Shim, Hyeorg Seop Song, Jae Kyu Cho, Yunae Kim, Dong-Wook Kim, Jihyun Min, Byoung Koun 2024-01-20T05:30:59Z 2024-01-20T05:30:59Z 2021-09-03 2015-12-16 1944-8244 https://pubs.kist.re.kr/handle/201004/124619 Significant enhancement of solution-processed CuInxGa1-x(Se,S)(2) (CIGSSe) thin-film solar cell performance was achieved by inducing a band gap gradient in the film thickness, which was triggered by the chalcogenization process. Specifically, after the preparation of an amorphous mixed oxide film of Cu, In, and Ga by a simple paste coating method chalcogenization under Se vapor, along with the flow of dilute H2S gas, resulted in the formation of CIGSSe films with graded composition distribution: S-rich top, In- and Se-rich middle, and Ga- and S-rich bottom. This uneven compositional distribution was confirmed to lead to a band gap gradient in the film, which may also be responsible for enhancement in the open circuit voltage and reduction in photocurrent loss, thus increasing the overall efficiency. The highest power conversion efficiency of 11.7% was achieved with J(sc) of 28.3 mA/cm(2), V-oc of 601 mV, and FF of 68.6%. English American Chemical Society LOW-COST CHALCOPYRITE PERFORMANCE Chalcogenization-Derived Band Gap Grading in Solution-Processed CuInxGa1-x(Se,S)(2) Thin-Film Solar Cells Article 10.1021/acsami.5b09054 1 ACS Applied Materials & Interfaces, v.7, no.49, pp.27391 - 27396 ACS Applied Materials & Interfaces 7 49 27391 27396 scie scopus 000366873900043 2-s2.0-84950146880 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article LOW-COST CHALCOPYRITE PERFORMANCE solar cells CIGSSe solution process band gap grading chalcogenization