Lee, Dong-Ki Ko, Hyungduk Cho, Younghak 2024-01-20T05:31:23Z 2024-01-20T05:31:23Z 2021-09-03 2015-12-01 0167-577X https://pubs.kist.re.kr/handle/201004/124640 In this paper, we report on an oxidized single Si submicron wire photodetector with a metal-semiconductor-metal (MSM) structure. The single Si submicron wire was successfully fabricated using a simple and cost-effective wet etching process. The single Si submicron wire photodetector with SiO2 layer achieved responsivity of 1.84 A/W and external quantum efficiency (EQE) of 6.23 x 102% with illumination of 365 nm. Furthermore, rapid and stable ON/OFF switching was achieved and reproducible by the oxidation of the Si surface. (C) 2015 Elsevier B.V. All rights reserved. English ELSEVIER NANOWIRE HETEROJUNCTION ABSORPTION Single Si submicron wire photodetector fabricated by simple wet etching process Article 10.1016/j.matlet.2015.08.056 1 MATERIALS LETTERS, v.160, pp.562 - 565 MATERIALS LETTERS 160 562 565 scie scopus 000364880300144 2-s2.0-84939807202 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article NANOWIRE HETEROJUNCTION ABSORPTION Si submicron wire Photodetector Responsivity External quantum efficiency (EQE)