Jin, Hyun Soo Cho, Young Jin Seok, Tae Jun Kim, Dae Hyun Kim, Dae Woong Lee, Sang-Moon Park, Jong-Bong Yun, Dong-Jin Kim, Seong Keun Hwang, Cheol Seong Park, Tae Joo 2024-01-20T05:31:32Z 2024-01-20T05:31:32Z 2021-09-03 2015-12-01 0169-4332 https://pubs.kist.re.kr/handle/201004/124649 Surface sulfur (S) passivation on InP substrate was performed using a dry process - rapid thermal annealing under H2S atmosphere for III-V compound-semiconductor-based devices. The electrical properties of metal-oxide-semiconductor capacitor fabricated with atomic-layer-deposited HfO2 film as a gate insulator were examined, and were compared with the similar devices with S passivation using a wet process - (NH4)(2)S solution treatment. The H2S annealing provided solid S passivation with the strong resistance against oxidation compared with the (NH4)(2)S solution treatment, although S profiles at the interface of HfO2/InP were similar. The decrease in electrical thickness of the gate insulator by S passivation was similar for both methods. However, the H2S annealing was more effective to suppress interface state density near the valence band edge, because thermal energy during the annealing resulted in stronger S bonding and InP surface reconstruction. Moreover, the flatband voltage shift by constant voltage stress was lower for the device with H2S annealing. (C) 2015 Elsevier B.V. All rights reserved. English ELSEVIER Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing Article 10.1016/j.apsusc.2015.09.232 1 APPLIED SURFACE SCIENCE, v.357, pp.2306 - 2312 APPLIED SURFACE SCIENCE 357 2306 2312 scie scopus 000366219700127 2-s2.0-84951115931 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article ALD HfO2 InP MOSFETs Sulfur passivation H2S annealing Interface state