Kim, Wooshik Park, Min-Chul 2024-01-20T05:32:14Z 2024-01-20T05:32:14Z 2021-09-03 2015-12 1226-4776 https://pubs.kist.re.kr/handle/201004/124687 In this paper, we consider a method for estimating a stripe-type defect and the reconstruction of a defect-free L/S type mask used in lithography. Comparing diffraction patterns of defected and defect-free masks, we derive equations for the estimation of the location and size of the defect. We construct an analytical model for this problem and derive closed form equations to determine the location and size using phase retrieval problem solving techniques. Consequently, we develop an algorithm that determines a defect-free mask pattern. An example shows the validity of the equations. English OPTICAL SOC KOREA PHASE RETRIEVAL ALGORITHMS Deterministic Estimation of Stripe Type Defects and Reconstruction of Mask Pattern in L/S Type Mask Inspection Article 10.3807/JOSK.2015.19.6.619 1 JOURNAL OF THE OPTICAL SOCIETY OF KOREA, v.19, no.6, pp.619 - 628 JOURNAL OF THE OPTICAL SOCIETY OF KOREA 19 6 619 628 scie scopus kci ART002057515 000367639800009 2-s2.0-84960106587 Optics Optics Article PHASE RETRIEVAL ALGORITHMS EUVL (Extreme ultraviolet lithography) Phase retrieval