Lee, J. W. Shon, Yoon Subramaniam, N. G. Kwon, Y. H. Kang, T. W. Im, Hyunsik Kim, H. S. Park, C. S. Kim, E. K. Song, J. D. Koo, H. C. Fu, D. J. 2024-01-20T05:32:37Z 2024-01-20T05:32:37Z 2021-09-03 2015-12 0022-2313 https://pubs.kist.re.kr/handle/201004/124710 GaN:Mn epilayers were grown on Al2O3 substrate uisng molecular beam epitaxy (MBE) and were subsequently implanted with Mn+ ions (1% and 10%). Photoluminescence (PL) with 1% of Mn showed that optical transitions related to Mn revealed the donor-Mn pair (D, Mn) at 2.5 eV and the electron-Mn pair (e, Mn) around 3.1 eV, and yellow luminescence (YL) around 2.20-2.25 eV. Photoluminescence (PL) with 10% of Mn showed the same but enhanced optical transitions as above. However, the new transitions around 1.65 eV for the sample with 10% which did not appeared with Mn of 1% were very weakly produced. The results of cathode-luminescence (CL) with 10% of Mn showed transitions related to Mn in PL together with new transitions around 1.72 eV. However, the new transitions around 1.72 eV for the sample with 10% according to high accelerating voltage were very remarkably activated in contrast with PL transitions which appeared were very weakly produced in samples with Mn of 10%. Transitions around 1.72 eV in CL correspond to though around 1.65 eV in PL This result means that deep donor (probably, V-N) is detected with increasing accelerating voltage and Mn-V-N complex is formed. This is supported by strong electron beam sensitivity of the IR emission bands. It is well known that heavy Mn doping ( > similar to 10(19) C m(-3)) leads to a downshift of the Fermi level and promotes the formation of defect complexes of Mn-V-N. In our case, Mn doping concentration is > similar to 10(21) C m(-3). Therefore, it is conjectured that the CL transition around 1.72 eV corresponds to Mn-V-N complex. (C) 2015 Elsevier B.V. All rights reserved. English ELSEVIER NEUTRAL MANGANESE ACCEPTOR OPTICAL-PROPERTIES MAGNETIC SEMICONDUCTOR MN FERROMAGNETISM Clarification of difference for transition between photoluminescence and cathode-luminescence based on GaMnN Article 10.1016/j.jlumin.2015.08.025 1 JOURNAL OF LUMINESCENCE, v.168, pp.288 - 292 JOURNAL OF LUMINESCENCE 168 288 292 scie scopus 000363353300044 2-s2.0-84941084430 Optics Optics Article NEUTRAL MANGANESE ACCEPTOR OPTICAL-PROPERTIES MAGNETIC SEMICONDUCTOR MN FERROMAGNETISM Photoluminescence (PL) Cathode-luminescence (CL) GaMnN