Park, Tae-Eon Suh, Joonki Seo, Dongjea Park, Joonsuk Lin, Der-Yuh Huang, Ying-Sheng Choi, Heon-Jin Wu, Junqiao Jang, Chaun Chang, Joonyeon 2024-01-20T05:33:02Z 2024-01-20T05:33:02Z 2021-09-03 2015-11-30 0003-6951 https://pubs.kist.re.kr/handle/201004/124732 We report on temperature-dependent charge and magneto transport of chemically doped MoS2, p-type molybdenum disulfide degenerately doped with niobium (MoS2: Nb). The temperature dependence of the electrical resistivity is characterized by a power law, rho(T) similar to T-0.25, which indicates that the system resides within the critical regime of the metal-insulator (M-I) transition. By applying high magnetic field (similar to 7 T), we observed a 20% increase in the resistivity at 2K. The positive magnetoresistance shows that charge transport in this system is governed by the Mott-like three-dimensional variable range hopping (VRH) at low temperatures. According to relationship between magnetic-field and temperature dependencies of VRH resistivity, we extracted a characteristic localization length of 19.8 nm for MoS2: Nb on the insulating side of the M-I transition. (C) 2015 AIP Publishing LLC. English AMER INST PHYSICS TRANSPORT-PROPERTIES MONOLAYER DIODES STATES MAGNETORESISTANCE POLYPYRROLE POLYANILINE Hopping conduction in p-type MoS2 near the critical regime of the metal-insulator transition Article 10.1063/1.4936571 1 APPLIED PHYSICS LETTERS, v.107, no.22 APPLIED PHYSICS LETTERS 107 22 scie scopus 000366311900041 2-s2.0-84948783345 Physics, Applied Physics Article TRANSPORT-PROPERTIES MONOLAYER DIODES STATES MAGNETORESISTANCE POLYPYRROLE POLYANILINE