Son, Dong-Hyeok Jo, Young-Woo Sindhuri, V. Im, Ki-Sik Seo, Jae Hwa Kim, Yong Tae Kang, In Man Cristoloveanu, Sorin Bawedin, Maryline Lee, Jung-Hee 2024-01-20T05:33:50Z 2024-01-20T05:33:50Z 2021-09-05 2015-11-01 0167-9317 https://pubs.kist.re.kr/handle/201004/124773 AlGaN/GaN FinFETs with various fin widths (W-fin), which have both a 2DEG channel and two sidewall MOS channels, have been fabricated by using electron-beam lithography and subsequent sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The devices with wide W-fin of 150 nm showed normally-on operation with threshold voltage (V-th) of -2.5 and -5.0 V, respectively. The devices also exhibited broad transconductance (g(m)), and excellent off-state performance with very low subthreshold swing (SS). On the other hand, narrow device with W-fin, of 50 nm exhibited normally-off operation with V-th of 3.0 V, but degraded SS due to trapping effect at the sidewall of fin. (C) 2015 Elsevier B.V. All rights reserved. English ELSEVIER Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET Article 10.1016/j.mee.2015.04.101 1 MICROELECTRONIC ENGINEERING, v.147, pp.155 - 158 MICROELECTRONIC ENGINEERING 147 155 158 scie scopus 000362308000038 2-s2.0-84928389904 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Optics Physics, Applied Engineering Science & Technology - Other Topics Optics Physics Article; Proceedings Paper AlGaN/GaN 2DEG FinFET Fin width TMAH solution Trapping/detrapping