Chang, S. -J. Bawedin, M. Andrieu, F. Navarro, C. Kim, Y. T. Bae, Y. Cristoloveanu, S. 2024-01-20T05:33:54Z 2024-01-20T05:33:54Z 2021-09-04 2015-11-01 0167-9317 https://pubs.kist.re.kr/handle/201004/124776 We investigated the characteristics of state-of-the-art FDSOI MOSFETs in a wide range of temperature by focusing on the effects of the back-gate bias, Si film thickness and channel length. High device performance and remarkably reduced short-channel effect with decreasing Si film thickness are achieved in ultra-thin film SOI devices. Systematic measurements reveal an unusual coupling effect resulting from the competition between front-gate, back-gate and temperature-dependent short-channel effect. Counter-intuitively, the impact of the back-gate bias can be smaller in 5 nm than in 10 nm thick MOSFETs, in particular in very short devices operated at 300 K. (C) 2015 Elsevier B.V. All rights reserved. English ELSEVIER THRESHOLD VOLTAGE DEVICES Unusual gate coupling effect in extremely thin and short FDSOI MOSFETs Article 10.1016/j.mee.2015.04.054 1 MICROELECTRONIC ENGINEERING, v.147, pp.159 - 164 MICROELECTRONIC ENGINEERING 147 159 164 scie scopus 000362308000039 2-s2.0-84928957389 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Optics Physics, Applied Engineering Science & Technology - Other Topics Optics Physics Article; Proceedings Paper THRESHOLD VOLTAGE DEVICES FDSOI Coupling effects Short-channel Ultra-thin film