Ma, J. W. Lee, W. J. Bae, J. M. Jeong, K. S. Oh, S. H. Kim, J. H. Kim, S. -H. Seo, J. -H. Ahn, J. -P. Kim, H. Cho, M. -H. 2024-01-20T05:34:20Z 2024-01-20T05:34:20Z 2021-09-05 2015-11 1530-6984 https://pubs.kist.re.kr/handle/201004/124799 Changes in the carrier mobility of tensile strained Si and SiGe nanowires (NWS) were examined using an electrical push-to-pull device (E-PTP, Hysitron). The changes were found to be closely related to the chemical structure at the surface, likely defect states. As tensile strain is increased, the resistivity of SiGe NWS deceases in a linear manner However, the corresponding values for Si NWs increased with increasing tensile strain, which is closely related to broken bonds induced by defects at the NW surface. Broken bonds at the surface, which communicate with the defect state of Si are critically altered when Ge is incorporated in Si NW. In addition, the number of defects could be significantly decreased in Si NWs by incorporating a surface passivated Al2O3 layer, which removes broken bonds, resulting in a proportional decrease in the resistivity of Si NW's with increasing strain. Moreover, the presence of a passivation layer dramatically increases the extent of fracture strain in NWs, and a significant enhancement in mobility of about 2.6 times was observed for a tensile strain of 5.7%. English AMER CHEMICAL SOC ELECTRONIC-STRUCTURE MECHANICAL-PROPERTIES SILICON DEVICES STATES Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering Article 10.1021/acs.nanolett.5b01634 1 NANO LETTERS, v.15, no.11, pp.7204 - 7210 NANO LETTERS 15 11 7204 7210 scie scopus 000364725400006 2-s2.0-84947080308 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article ELECTRONIC-STRUCTURE MECHANICAL-PROPERTIES SILICON DEVICES STATES Si SiGe nanowire strain surface defect passivation