Jin, Hyunwoo Kim, Kwang-Chon Seo, Juhee Kim, Seong Keun Cheong, Byung-ki Kim, Jin-Sang Lee, Suyoun 2024-01-20T05:34:49Z 2024-01-20T05:34:49Z 2021-09-05 2015-11 2040-3364 https://pubs.kist.re.kr/handle/201004/124826 We investigated the magnetotransport properties of Bi2Te3 films grown on GaAs (001) substrate by a cost-effective metallo-organic chemical vapor deposition (MOCVD). We observed the remarkably high carrier mobility and the giant linear magnetoresistance (carrier mobility similar to 22 000 cm(2) V-1 s(-1), magnetoresistance similar to 750% at 1.8 K and 9 T for a 100 nm thick film) that depends on the film thickness. In addition, the Shubnikov-de Haas oscillation was observed, from which the effective mass was calculated to be consistent with the known value. From the thickness dependence of the Shubnikov-de Haas oscillation, it was found that a two dimensional electron gas with the conventional electron nature coexists with the topological Dirac fermion states and dominates the carrier transport in the Bi2Te3 film with thickness higher than 300 nm. These results are attributed to the intrinsic nature of Bi2Te3 in the high-mobility transport regime obtained by a deliberate choice of the substrate and the growth conditions. English ROYAL SOC CHEMISTRY 3-DIMENSIONAL TOPOLOGICAL INSULATOR SURFACE-STATES OSCILLATIONS ENHANCEMENT BI2SE3 METALS PHASE High mobility, large linear magnetoresistance, and quantum transport phenomena in Bi2Te3 films grown by metallo-organic chemical vapor deposition (MOCVD) Article 10.1039/c5nr05491e 1 NANOSCALE, v.7, no.41, pp.17359 - 17365 NANOSCALE 7 41 17359 17365 scie scopus 000363181600023 2-s2.0-84945156930 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Chemistry Science & Technology - Other Topics Materials Science Physics Article 3-DIMENSIONAL TOPOLOGICAL INSULATOR SURFACE-STATES OSCILLATIONS ENHANCEMENT BI2SE3 METALS PHASE